Large Scale Directed Assembly of Single SWNT for NEMS Switches

| June 4, 2013

Objective: To conduct wafer level assembly of one single wall carbon nanotube for each nano electromechanical device with a high yield.

Approach: Employ dielectrophoretic process to assemble SWNT dispersed in aqueous solution by employing a phase shift power source and stream line jet of N2 gas for the bridge structure of nanodevice template where the electrode shaped to reduce the number of SWNTs assembled at the switch.

Broader Impact: This wafer level direct assembly process can be employed to assemble one SWNTs to fabricate devices like sensors, field effect transistors, memory storage devices, actuators and field emission sources, on a large scale at high rate and high yield.

Significant Results: The assembly of one SWNTs for the bridge structure of the proposed NEMS device by CHN, a nanoswitch, was achieved at a higher yield compatible with as shown.

NSF Grant Number: EEC-0425826
PI(s): Ahmed Busnaina, Nick McGruer
Associate Research Scientist: Sivasubramanian Somu
Student Researcher: Tae-Hoon Kim
Institution: Northeastern University

 

Final process employing the modification of electrode configuration, a phase shifter, jet stream line of N2 gas and fine tuning based on the study of the process parameters

Final process employing the modification of electrode configuration, a phase shifter, jet stream line of N2 gas and fine tuning based on the study of the process parameters